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| STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor 8.0A Ultra-Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super-fast switching for high efficiency High current capability and low forward voltage drop D Surge overload rating to 100A peak D Low reverse leakage current D Plastic material - UL Recognition flammability classification 94V-0 94 9537 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Peak forward surge current Average forward current TA=125C Junction and storage temperature range Test Conditions Type STPR805DB STPR810DB STPR815DB STPR820DB Symbol VRRM =VRWM V =VR IFSM IFAV Tj=Tstg Value 50 100 150 200 100 8 -65...+150 Unit V V V V A A C Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to ambient Test Conditions IF=8A TC=25C TC=100C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD RthJA Min Typ Max 1.3 10 500 25 Unit V mA mA ns pF K/W 45 3.1 Rev. A2, 24-Jun-98 1 (4) STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 10 C D - Diode Capacitance ( pF ) 8 6 400 Tj = 25C f = 1 MHz 100 4 2 Resistive or inductive load 0 0 15438 10 50 100 150 15441 0.1 1.0 10 100 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 100 IF - Forward Current ( A ) Tj = 25C IF Pulse Width = 300 s 2% Duty Cycle Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 IR - Reverse Current ( m A ) Tj = 125C 10 Tj = 100C 10 1.0 1.0 0.1 Tj = 25C 0.1 0.2 15439 0.01 0.6 1.0 1.4 15446 0 40 80 120 VF - Forward Voltage ( V ) Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage I FSM- Peak Forward Surge Current ( A ) 150 125 100 75 50 25 0 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage 8.3 ms Single Half-Sine-Wave JEDEC method 1 15440 10 Number of Cycles at 60 Hz 100 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor Dimensions in mm 14469 Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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